Researchers overcome technical challenges to fabricate vapor-deposited high-performance tin perovskite transistors
Solution-processed tin (Sn2+)-halide perovskites can be used to create p-channel thin-film transistors (TFTs) with performance levels comparable with commercial low-temperature polysilicon technology. However, high-quality perovskite film deposition using industry-compatible production techniques remains challenging.
To address this challenge, researchers at Pohang University of Science and Technology, Korea Research Institute of Standards and Science and University of Electronic Science and Technology of China have fabricated p-channel Sn2+-halide perovskite TFTs using a thermal evaporation approach with inorganic caesium tin iodide (CsSnI3).