Researchers from Pennsylvania State University and University of Cincinnati recently reported the development of a new bio-hybrid memory device that bridges the gap between biological macromolecules and semiconductor electronics, using synthetic DNA integrated with quasi-two-dimensional halide perovskites. The work highlights an advance toward ultra-low-power, high-density data storage technologies.
(a) Schematic illustration of the resistive memory device structure, (b) Cross-sectional SEM images of Ag/(PEA)2(MA)Pb2I7/Ag-synDNA/Pt memristors, and (c) Schematic illustration of the interaction between Ag-synDNA and quasi-2D perovskite. Image from: Advanced Functional Materials
The team fabricated memristor arrays constructed from silver/(PEA)₂(MA)Pb₂I₇/Ag-synDNA/platinum structures, where (PEA)₂(MA)Pb₂I₇ represents a layered organic–inorganic perovskite and Ag-synDNA comprises synthetic 22-mer DNA strands embedded with silver nanoparticles. This design delivered impressive resistive switching (RS) characteristics: operating voltages below 0.1 V, record-low power density at just 0.01 W/cm², and a stable ON/OFF ratio exceeding 10⁵, maintained for over six weeks in ambient conditions. Devices also demonstrated robust endurance over 10³ cycles and retention longer than 4 × 10³ s even at elevated temperatures up to 393 K (120 °C).
“Biology and electronics are different domains,” said Kavya S. Keremane, co-corresponding author and postdoctoral researcher in materials science and engineering at Penn State. “Bridging these two fields required developing an entirely new materials platform that allows them to function seamlessly together. By combining the information storage capabilities of DNA with the exceptional electronic properties of perovskite semiconductors, we created a bio-hybrid system that fundamentally changes how low-power memory devices can be designed.”
At the core of the device’s performance lies the synergistic interaction between the silver-doped synthetic DNA and the perovskite matrix. The customized DNA sequences, rationally designed for precise length and composition, form organized molecular scaffolds that enable unidirectional charge transport along the DNA helix axis. Embedded silver nanoparticles serve as conductive bridges between DNA segments, enhancing carrier mobility, stabilizing the molecular structures via metal–base coordination, and facilitating controlled filament formation during switching. This not only improves conductivity and uniformity but also ensures reproducible switching dynamics across device batches, achieving an impressive fabrication yield of 94%.
“Usually, it takes more power to store more information,” explained co-author Bed Poudel. “Our device, however, consumes 100 times less power and the storage capacity is higher than traditional storage devices, like flash drives”. The memristor’s ability to store and process information in a single element enables neuromorphic computing architectures that emulate synaptic learning, marking a step toward AI-oriented, energy-efficient computing systems.
Computational modeling using PyMOL confirmed the entropy-driven π–π stacking interactions between perovskite cations and DNA nucleobases, forming ordered, low-energy interfaces conducive to fast charge transfer. By tuning the compliance current between 1 µA and 100 mA, the researchers also demonstrated multilevel data storage, indicating the potential for high-density, analog-state memory applications.
This work showcases how biologically derived synthetic materials, when rationally engineered and coupled with optoelectronic semiconductors such as perovskites, can yield a new generation of environmentally robust, low-voltage, bio-hybrid electronic devices. Next steps for the team involve refining the architecture and exploring additional DNA-metal combinations for scalable memory and sensing technologies.
