Engineers have long aimed to create small, efficient lasers for silicon chips, crucial for advanced optical communications and computing. Traditional lasers use expensive III-V semiconductors, which are hard to integrate with silicon. All-inorganic perovskite films offer a cheaper, versatile alternative with strong optical properties. However, a key challenge is that at room temperature, perovskite lasers struggle to operate continuously, as they quickly lose charge carriers due to Auger recombination.
Researchers from Zhejiang University and Shanxi‐Zheda Institute of Advanced Materials and Chemical Engineering have developed a simple method to overcome this challenge, leading to record-setting performance for perovskite lasers under near-continuous operation. The new approach uses a volatile ammonium additive during the annealing process of polycrystalline perovskite films. This additive triggers a “phase reconstruction” that removes unwanted low-dimensional phases, reducing channels that accelerate Auger recombination. The result is a pure 3D structure that better preserves the charge carriers needed for lasing, without adding significant optical loss.
To assess the improvement, the team analyzed how electrons and holes recombine under different pumping conditions. Auger recombination—where energy from a recombining electron-hole pair is given to another carrier instead of emitted as light—becomes especially problematic when the input light is delivered in longer pulses or continuous beams. In those situations, carrier injection occurs on a timescale similar to or longer than the Auger lifetime, leading to rapid carrier loss and preventing the build-up of population inversion needed for lasing. By suppressing this process, the researchers were able to sustain the carrier densities required for efficient stimulated emission.
With their optimized films, the team built a single-mode vertical-cavity surface-emitting laser (VCSEL) that achieved a low lasing threshold of 17.3 μJ/cm² and an impressive quality factor of 3850 under quasi-continuous nanosecond pumping. This performance reportedly marks the best reported to date for a perovskite laser in this regime.
The results highlight a practical route for making high-performance perovskite lasers that could work under true continuous-wave or electrically driven conditions—key milestones for their integration into future photonic chips and potentially flexible or wearable optoelectronic devices.
