Solution-processed perovskite quantum dot (PeQD) light-emitting diodes (QLEDs) represent a promising and scalable alternative for next-generation displays by eliminating the need for vacuum deposition of emissive and charge transport layers. A major challenge, however, is that solution-processed charge transport layers (CTLs) often damage the emissive PeQD layer, leading to photoluminescence quenching and reduced device efficiency.
To overcome this limitation, researchers at China's Ningbo University have introduced two key molecular additives into CsPbBr₃ PeQD inks: an organic pseudohalide, dodecyl dimethylthioacetamide (DDASCN), and a photosensitive ligand, pentaerythritol tetrakis(3-mercaptopropionate) (PTMP).
DDASCN effectively suppresses non-radiative recombination, boosts the photoluminescence quantum yield (PLQY) of PeQD films, and enhances resistance to air, UV irradiation, and thermal stress. Meanwhile, PTMP enables UV-induced crosslinking with residual oleylamine and oleic acid via thiol–ene click chemistry, rendering films resistant to nonpolar solvents under mild irradiation.
With this synergistic strategy, the team fabricated fully solution-processed green perovskite QLEDs that achieved a maximum luminance of 30,500 cd/m² and an external quantum efficiency of 18.6%, ranking among the highest reported for solution-processed perovskite QLEDs.
This combined approach of pseudohalide passivation and ligand crosslinking enables solvent-resistant PeQD films with preserved high PLQY, advancing the path toward cost-effective, high-performance optoelectronic devices.
