Researchers from National Taiwan University, National Synchrotron Radiation Research Center and Academia Sinica have developed a strategy for enhancing the performance and stability of tin-based perovskite transistors by incorporating porphyrin-like additives.
The research team focused on two additives: H₂Pc and SnPc, both of the phthalocyanine family and known for their strong chemical stability and ability to interact with metal ions. When added to perovskite precursor solution, they help suppress the oxidation of tin ions and improve overall film quality. As a result, the transistors exhibited significantly higher charge mobility (up to 4.40 cm² V⁻¹ s⁻¹) and improved resistance to environmental degradation. The additives also increased grain sizes and reduced defects, which are critical for efficient charge transport.
In addition to improving transistor performance, the devices also demonstrated fast and stable photomemory behavior. When exposed to light of different wavelengths, the transistors can maintain their memory state even after extremely short pulses (as short as 0.001 seconds). This nonvolatile memory effect opens exciting possibilities for neuromorphic computing, where devices mimic the way the human brain processes and stores information.
“This work demonstrates how molecular engineering can unlock new functionalities in emerging materials,” said Prof. Chu-Chen Chueh, the study’s corresponding author.
