Researchers from Nanchang University, Wuyi University and Jiangxi Science and Technology Normal University have reported a step forward in understanding how interfacial chemistry governs the performance and stability of halide perovskite memristors.
The study systematically explores how top electrode materials - including Au, Ag, Cu, and Al - impact the resistive switching behavior of quasi-2D CsPbBr₃ devices. By introducing a novel bilayer electrode architecture, the team successfully decoupled surface oxidation of the electrode from intrinsic redox processes at the perovskite/electrode interface. This breakthrough approach allowed for a clear separation of the chemical and physical contributions that dictate device performance.
Through a combination of in situ X-ray diffraction, photoluminescence, and interfacial X-ray photoelectron spectroscopy, the researchers revealed that voltage-driven bromide ion migration and electrode-dependent reactions dictate the switching mechanism. Chemically inert Au electrodes exhibited no switching due to limited interfacial activity, while highly reactive Al led to irreversible degradation.
In contrast, Ag and Cu electrodes - with moderate reactivity - achieved stable bipolar switching with dual negative differential resistance, highlighting the importance of balanced interfacial redox reactions.
These findings establish a rational framework linking electrode chemical reactivity to the functional stability of perovskite-based memristors. As memristive devices continue to attract attention for neuromorphic and in-memory computing, the work provides practical design rules for achieving both durability and reliable performance in halide perovskite devices. The insights not only deepen understanding of ion-electrode interactions but also open pathways to next-generation, energy-efficient computing architectures based on engineered perovskite interfaces.
