Researchers from India's Mahatma Gandhi Central University, Banaras Hindu University, Japan's Toyota Technological Institute and Taiwan's National Yang Ming Chiao Tung University have performed an analysis of a highly efficient perovskite-based solar cell (PSC) design comprising FTO/TiO2-SnO2/CsSnCl3/Cu2O/Au structure with a focus on the enhancement of the device’s performance.
The thin film material, such as CsSnCl3, serving as the light-absorbing layer, does not contain any toxic elements. TiO2-SnO2 is the electron transport surface (ETS) with excellent energy level alignment while Cu2O is used as hole transport surface (HTS). In this work, the structure of the proposed device was systematically investigated by SCAPS 1D including power conversion efficiency (PCE), thicknesses of HTS, perovskite layer, ETS, as well as temperature, series and shunt resistance. In addition, interface defect density, Mott-Schottky, capacitance, recombination-generation rate and electrical impedance spectroscopy of the device were also analyzed.
The structure obtained has open circuit voltage (Voc ) of 1.46 V, short circuit current density (Jsc) of 27.53 mA/cm2 , Fill factor (FF) 83.58% and efficiency (eta) of 33.68 %.
The optimized thickness of HTS, absorber and ETS are 0.2, 1.8 and 0.02 μm respectively, while the optimized doping is 1021 cm-3 for each layer.
The device reportedly exhibits remarkable temperature resilience in the range of 290-310 K with minimal performance decline beyond this range.
This study highlights the potential of lead-free perovskites in next-generation solar cells and shows that high efficiency can be obtained by careful material selection and optimization.
