Risen Energy recently announced progress in its heterojunction (HJT) silicon-based perovskite tandem cell technology. Reportedly certified by authoritative institutions, the company’s 1 cm2 tandem cell achieved a photoelectric conversion efficiency of 31.95%, with an open-circuit voltage of 1.988V.
This achievement is built upon the company’s long-term expertise in both HJT and perovskite technical routes. As one of the early pioneers in HJT industrialization, Risen Energy has mastered a comprehensive technical ecosystem, ranging from high-efficiency N-type HJT ground-based photovoltaic products to P-type HJT cells designed for the harsh environments of outer space.
In terms of processing, the Risen Energy R&D team introduced a water-bath immersion method and other advanced techniques to overcome the challenge of ensuring uniform perovskite layer coverage on the HJT cell’s pyramidal textured surface. This process generates a high-quality Self-Assembled Monolayer (SAM) on complex textured surfaces. This technology effectively improves charge transport and reduces defect density, successfully translating the advantages of the HJT bottom cell into a high-performance tandem device.
