Transistors

Researchers from Pohang University of Science and Technology (POSTECH), Chinese Academy of Sciences (CAS) and University of Electronic Science and Technology of China have developed perovskite transistors through the use of three distinct perovskite cation processes. 

The team showed that pure-tin perovskite thin-film transistors can be created using triple A cations of caesium–formamidinium–phenethylammonium. This approach reportedly leads to high-quality cascaded tin perovskite channel films with low-defect, phase-pure perovskite/dielectric interfaces.

TCI has launched a range of molecular dopants that can significantly increase the charge carrier density and modify the energy levels in organic electronics devices. Molecular dopants offer a versatile platform to tune the optoelectrical and electrical properties of organic semiconductors to application-specific demands, allowing advantages like increasing the electrical conductivity and mobility by orders of magnitude and improving contact properties in various electronic and optoelectronic devices.

TCI's p-type and n-type dopants can be applied to various organic electronics devices, such as: carrier transport layers of organic light-emitting diodes (OLEDs), organic photovoltaics (OPVs), perovskite solar cells (PSCs), and perovskite quantum dot LEDs, as well as active layers of organic field-effect transistors (OFETs), OPVs, and thermoelectric devices in the field of organic electronics research.

An international research group that included teams from Vrije Universiteit Amsterdam, University of Fribourg, the University of the Basque Country and the University of New South Wales has assessed the levels of efficiency and stability that perovskite solar cells (PSCs) have to achieve in order to become an economically viable technology to compete with crystalline silicon cells in the rooftop segment.

The scientists assessed the necessary lifetime (LT) of a perovskite module, which they defined as the time until a module has 80% of its initial efficiency, as a function of efficiencies to be competitive in the levelized cost of electricity (LCOE). They found that perovskite solar modules might need to provide 20% efficiency for at least 36 years, or 25% efficiency for a minimum of 21 years, if they want to compete with conventional PV panels.

Researchers at KIST and Gwangju Institute of Science and Technology (GIST), led by Dr. Yusin Pak at the Sensor System Research Center (KIST) and Professor Gun Young Jung at the School of Materials Science and Engineering (GIST), have developed ultra-high-speed, high-efficiency optoelectronic logic gates (OELGs) by using organic-inorganic perovskite photodiodes.

Demand is increasing for computers that can quickly calculate and process large amounts of information, as artificial intelligence, self-driving cars, drones, and metaverse technologies are drawing attention as core industries of the future. However, electronic semiconductor logic gates, which serve as the brains of computers, have limited capacity in high-speed data calculation and processing, and have disadvantages in that they consume a lot of energy and generate considerable heat.

A team of researchers from Pohang University of Science and Technology, University of Electronic Science and Technology of China and Sungkyunkwan University has improved the performance of a p-type semiconductor transistor, using inorganic metal halide perovskite.

One of the biggest advantages of the new technology is that it enables solution-processed perovskite transistors to be simply printed as semiconductor-like circuits.

Scientists at the National Renewable Energy Laboratory (NREL) have experimentally synthesized a nitride perovskite material that previously only existed in theory and measured its properties in collaboration with researchers at the Colorado School of Mines.

The new material could theoretically be used for microelectromechanical devices such as the ones used in telecommunications and other areas. Nitride perovskites have been computationally predicted to be stable, but not many have been synthesized, and their experimental properties remain largely unknown, the researchers explained in their new article.

Researchers from TNO at Holst Centre, Solliance and TU/e have jointly developed a thin and flexible perovskite-based scanner for fingerprints.

Low-resolution image-sensor arrays have been demonstrated in the past, but the high-resolution, high pixel-count image sensors suitable for commercial applications have not yet been truly achieved. The thin and flexible scanner in this new work is based on metal-halide perovskites (MHPs). Gerwin Gelinck, Chief Technology Officer TNO at Holst Centre, elaborates on the new study: 'Perovskites are marvelous materials! For the first time we show that these materials are also very good for light imaging and sensing applications. When combined with display-like transistors, we made a scanner that can capture high-resolution color images as well as biometric fingerprinting'.

A team of researchers from Oak Ridge National Laboratory, Florida State University, Argonne National Laboratory, University of Pittsburgh, Pittsburgh Quantum Institute and Sungkyunkwan University has found a rare quantum material in which electrons move in coordinated ways, essentially 'dancing.'

Straining the material creates an electronic band structure that sets the stage for exotic, more tightly correlated behavior ' similar to tangoing ' among Dirac electrons, which are especially mobile electric charge carriers that may someday enable faster transistors.

Researchers from the UK's University of Bath and Germany's Max Planck Institute for Polymer Research have developed a way to make perovskite-based components for low-cost electronics.

The physicists have found a way to make perovskite-based transistors, while overcoming the problem of the material's ion content interfering with the flow of electronic current through a transistor. This breakthrough may pave the way for research into greener electronic components for low-cost electronic devices.

Organic-inorganic hybrid perovskites (OIHPs) have great potential for various applications like solar cells, lighting-emitting diodes (LEDs), field effect transistors (FETs) and photodetectors. Among their most important parameters influencing the power conversion efficiency (PCE) of devices based on perovskite materials is their carrier mobility. However, despite massive progress made by introducing new components into the structure to control the mobility of the carriers, the understanding on the atom level of how the components affect the performance is still lacking.

To address this problem, a research team led by Prof. Luo Yi and Prof. Ye Shuji from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has synthesized a series of 2D OHIPs films with large organic spacer cations.