Perovskites enable novel light-emitting memory devices

Researchers from National Taiwan Normal University and Kyushu University have developed a new memory device, readable through both electrical and optical methods, that needs only perovskites to simultaneously store and visually transmit data.

All-inorganic perovskite quantum dot light-emitting memories imageSchematic of the CsPbBr3 QD-based LEM device. Image from Nature Communications

By integrating a light-emitting electrochemical cell with a resistive random-access memory that are both based on perovskite, the team achieved parallel and synchronous reading of data both electrically and optically in a ‘light-emitting memory.’

Researchers design perovskite memory devices with ultra-fast switching speed

A research team led by Professor Jang-Sik Lee of Pohang University of Science and Technology (POSTECH) has developed a halide perovskite-based memory with ultra-fast switching speed.

Four-step screening to identify HP materials for RSM image

Resistive switching memory is a promising contender for next-generation memory device due to its advantages of simple structure and low power consumption. Various materials have been previously studied for resistive switching memory. Among them, halide perovskites are receiving much attention for use in the memory because of low operation voltage and high on/off ratio. However, halide perovskite-based memory devices have limitations like slow switching speed which hinder their practical application in memory devices.

Researchers report new perovskite-based synapse-like phototransistor

Researchers at the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL) have reported a breakthrough in energy-efficient phototransistors - devices that could someday help computers process visual information similarly to the human brain and be used as sensors in applications like self-driving vehicles.

The structures rely on metal-halide perovskites. Jeffrey Blackburn, a senior scientist at NREL and co-author of a new paper outlining the research, said: “In general, these perovskite semiconductors are a really unique functional system with potential benefits for a number of different technologies”. “NREL became interested in this material system for photovoltaics, but they have many properties that could be applied to whole different areas of science.”

Researchers achieve magnetic lead-free halide double perovskites

Researchers at Linköping University in Sweden have announced the development of an optoelectronic magnetic double perovskite. The discovery could open the door to combining spintronics with optoelectronics for rapid and energy-efficient information storage.

The team explains that one type of perovskite that contains halogens and lead has recently been shown to have interesting magnetic properties, opening the possibility of using it in spintronics. Spintronics is thought to have huge potential for the next generation of information technology, since information can be transmitted at higher speeds and with low energy consumption. However, magnetic properties of halide perovskites have until now been associated only with lead-containing perovskites, which has limited the development of the material for both health and environmental reasons.

Perovskite-based RRAM developer 4DS Memory raises $5.45 million

4DS Memory logoAustralia-based RRAM developer 4DS Memory announced that it has raised a total of $7.6 million AUD ($5.45 million USD) in two financing round. The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide.

4DS Memory says that it will use the funds to further develop its Interface Switching ReRAM technology with imec and Western Digital's subsidiary, HGST.