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Memory devices

Researchers report new perovskite-based synapse-like phototransistor

Researchers at the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL) have reported a breakthrough in energy-efficient phototransistors - devices that could someday help computers process visual information similarly to the human brain and be used as sensors in applications like self-driving vehicles.

The structures rely on metal-halide perovskites. Jeffrey Blackburn, a senior scientist at NREL and co-author of a new paper outlining the research, said: “In general, these perovskite semiconductors are a really unique functional system with potential benefits for a number of different technologies”. “NREL became interested in this material system for photovoltaics, but they have many properties that could be applied to whole different areas of science.”

Read the full story Posted: Apr 29, 2021

Researchers achieve magnetic lead-free halide double perovskites

Researchers at Linköping University in Sweden have announced the development of an optoelectronic magnetic double perovskite. The discovery could open the door to combining spintronics with optoelectronics for rapid and energy-efficient information storage.

The team explains that one type of perovskite that contains halogens and lead has recently been shown to have interesting magnetic properties, opening the possibility of using it in spintronics. Spintronics is thought to have huge potential for the next generation of information technology, since information can be transmitted at higher speeds and with low energy consumption. However, magnetic properties of halide perovskites have until now been associated only with lead-containing perovskites, which has limited the development of the material for both health and environmental reasons.

Read the full story Posted: Nov 08, 2020

Perovskite-based RRAM developer 4DS Memory raises $5.45 million

4DS Memory logoAustralia-based RRAM developer 4DS Memory announced that it has raised a total of $7.6 million AUD ($5.45 million USD) in two financing round. The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide.

4DS Memory says that it will use the funds to further develop its Interface Switching ReRAM technology with imec and Western Digital's subsidiary, HGST.

Read the full story Posted: Jul 30, 2020

2D perovskite shown promise for advanced memory devices

A Pohang University of Science & Technology (POSTECH) research team has designed a halide perovskite material for next-generation memory devices. Characteristics like low-operating voltage and high-performance resistive switching memory could mean great commercialization potential.

As rapid distribution and transmission of high-quality contents are growing rapidly, it is critical to develop reliable and stable semiconductor memories. To this end, the POSTECH research team succeeded in designing an optimal halide perovskite material (CsPb2Br5) that can be applied to a ReRAM device by applying first-principles calculation based on quantum mechanics.

Read the full story Posted: Jul 14, 2020

EPFL team uses perovskites to show how magneto-optical drives could be cheaper and faster than HDDs

Physicists at the École polytechnique fédérale de Lausanne (EPFL) in Switzerland have used perovskite materials to alter a magnetic bit’s polarity with light, potentially opening the door to denser and faster disk drives using magneto-optical technology.

EPFL introduces perovskite-based light-operated hard drives image

Researchers László Forró, Bálint Náfrádi, Péter Szirmai and Endre Horváth suggest magneto-optical drives using this method could be physically smaller, faster and cheaper than today’s disk drives. They also say it is an alternative to heat-assisted magnetic recording (HAMR).

Read the full story Posted: Mar 11, 2020