Memory devices

A research team led by Professor Jang-Sik Lee of Pohang University of Science and Technology (POSTECH) has developed a halide perovskite-based memory with ultra-fast switching speed.

Resistive switching memory is a promising contender for next-generation memory device due to its advantages of simple structure and low power consumption. Various materials have been previously studied for resistive switching memory. Among them, halide perovskites are receiving much attention for use in the memory because of low operation voltage and high on/off ratio. However, halide perovskite-based memory devices have limitations like slow switching speed which hinder their practical application in memory devices.

Researchers at Linköping University in Sweden have announced the development of an optoelectronic magnetic double perovskite. The discovery could open the door to combining spintronics with optoelectronics for rapid and energy-efficient information storage.

The team explains that one type of perovskite that contains halogens and lead has recently been shown to have interesting magnetic properties, opening the possibility of using it in spintronics. Spintronics is thought to have huge potential for the next generation of information technology, since information can be transmitted at higher speeds and with low energy consumption. However, magnetic properties of halide perovskites have until now been associated only with lead-containing perovskites, which has limited the development of the material for both health and environmental reasons.