EPFL team uses perovskites to show how magneto-optical drives could be cheaper and faster than HDDs

Physicists at the École polytechnique fédérale de Lausanne (EPFL) in Switzerland have used perovskite materials to alter a magnetic bit’s polarity with light, potentially opening the door to denser and faster disk drives using magneto-optical technology.

EPFL introduces perovskite-based light-operated hard drives image

Researchers László Forró, Bálint Náfrádi, Péter Szirmai and Endre Horváth suggest magneto-optical drives using this method could be physically smaller, faster and cheaper than today’s disk drives. They also say it is an alternative to heat-assisted magnetic recording (HAMR).

Thin films of perovskite oxides may enable writing data at terahertz frequency

scientists at the University of Warwick, Oxford University, University of Cambridge, Los Alamos National Laboratory and University at Buffalo in the U.S have found a colossal magnetoresistance at terahertz frequencies at room temperature in high-quality functional perovskite-based nanocomposites. This may find use in nanoelectronics and in THz optical components controlled by magnetic fields.

Thin films of perovskite oxides may enable writing data at terahertz frequency

Electronics that can read and write data at terahertz frequency, rather than at a few gigahertz, can lead to faster performance. Creating such devices would be aided by the use of materials that can undergo a huge change in how easily they conduct electricity in response to a magnetic field at room temperature. Scientists believe thin films of perovskite oxides hold promise for such uses, but such behavior has until now never been seen at these frequencies in these films.

imec to assist 4DS Memory in developing a process for its perovskite-based RRAM memory

Australia-based RRAM developer 4DS Memory announced that it has signed an agreement with Belgium-based imec to develop a transferable manufacturing process for its technology. As part of the agreement the two parties will demonstrate the process with a 1Mbit test chip.

The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide. The cells have no filaments and are so claim to be easier to scale compared to filamentary RRAM.

A new perovskite material may open the door to next-gen data storage

EPFL scientists have developed a new perovskite material whose magnetic order can be rapidly changed without disrupting it due to heating. This novel material may potentially be used to build next-generation hard drives.

The EPFL team synthesized a ferromagnetic photovoltaic material. This material is a modified version of perovskite, that exhibits unique properties that make it particularly interesting as a material to build next-generation digital storage systems. The researchers explain that they have basically created the first magnetic photoconductor; This new crystal structure combines the advantages of both ferromagnets, whose magnetic moments are aligned in a well-defined order, and photoconductors, where light illumination generates high density free conduction electrons.

4DS Memory developed a 40nm RRAM memory cell based on perovskite materials

4DS Memory logoUS-based RRAM developer 4DS Memory announced that it developed a working 40nm RRAM memory cells. The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide.

4DS Memory's development was achieved in collaboration with HGST, a subsidiary of Western Digital. 4DS has been collaboration with HGST for the past two years under a joint development agreement (JDA). When the JDA commenced, 4DS memory cells were at 800 nm. The JDA was renewed in July 2016 for a further 12 months and is focused on optimizing scalability and cycling endurance or RRAM cells for the mobile and cloud gigabyte silicon storage market.