Researchers from China's Shenzhen Campus of Sun Yat-sen University have reported a new type of two-terminal self-rectifying memristor that gets rid of asymmetric complex structures by using CsPbBr3 perovskite nanocrystals (NCs). The integration of rectifying effects with resistance switching in a self-rectifying memristor offers the opportunity to suppress the sneak current in high-density crossbar arrays for energy-efficient neuromorphic computing.
This study demonstrates the possibility of constructing controllable self-rectifying memristors without involving asymmetric complex structures, paving a new way for resolving the sneak current issue in crossbar arrays of memristors.
The simple metal-insulator-metal (Au/CsPbBr3 NCs/Au) configuration that eases integration reportedly exhibits multiple resistance states that can be precisely controlled by the stimulus properties and dynamical rectifying characteristics dependent on both the bias voltage and bias time.
The scientists have extended an earlier proposed theory that predicts electric-potential-distribution-controlled rectification to rationalize all the observed rectifying behavior that are regulated by mobile-ion-induced interfacial electrochemical reactions and found excellent agreement between theory and experiments.
