Researchers from Rutgers University, University of Minnesota and University of Texas at Dallas in the U.S have discovered a new type of electric field effect that can control light emission from perovskite devices.
The electric field effect usually refers to the modulation of electrical conductivity in a semiconductor by means of an applied voltage to a gate electrode and forms the basis of modern digital electronics. In a conventional field effect transistor (FET), the conductivity of a semiconductor layer can be turned on or off or gradually ramped up or down. Now, the research team has found that the photoluminescence (PL) of a perovskite device can be modulated in a similar manner. “Our work reports a novel type of field effect in which PL, rather than conductivity, is tuned by an ‘electric knob’ – the gate voltage,” explains Vitaly Podzorov, who led the research.