Researchers achieve high breakdown resistance in 2D perovskite antiferroelectric material
Researchers at the Fujian Institute of Research on the Structure of Matter (FJIRSM), Chinese Academy of Sciences, have developed a two-dimensional perovskite antiferroelectric material, (2-MBA)2CsPb2Br7 (2-MBA = 2-methylbutylammonium), with breakdown resistance and cycling stability among the highest reported for molecular antiferroelectrics.
Stable breakdown resistant molecular antiferroelectric triggered by confinement-dependent atomic displacement. (Image by FJIRSM)
Molecular antiferroelectrics, which arrange dipoles in antiparallel configurations between neighboring lattices, are attractive for high-precision digital displacement sensors and energy-storage capacitors. In practice, though, their usefulness has been limited by relatively low maximum applied field strength and poor long-term cycling stability, a gap the field has struggled to close because the atomic-level origin of antiferroelectric ordering itself has not been well understood.

