4DS Memory developed a 40nm RRAM memory cell based on perovskite materials

4DS Memory logoUS-based RRAM developer 4DS Memory announced that it developed a working 40nm RRAM memory cells. The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide.

4DS Memory's development was achieved in collaboration with HGST, a subsidiary of Western Digital. 4DS has been collaboration with HGST for the past two years under a joint development agreement (JDA). When the JDA commenced, 4DS memory cells were at 800 nm. The JDA was renewed in July 2016 for a further 12 months and is focused on optimizing scalability and cycling endurance or RRAM cells for the mobile and cloud gigabyte silicon storage market.

Posted: Oct 18,2016 by Ron Mertens