Researchers from the Zhengzhou University of Light Industry have developed a UV detector of (BA)2PbCl4/textured silicon (BA = n-butylammonium) heterojunction by depositing (BA)2PbCl4 thin film on textured silicon.
High performances of a rapid UV light response (trise = tfall = 0.24 s), high responsivity (8.16 mA/W), and a low detection limit (7.5 μW/cm2) were reportedly obtained from the designed detector, which were ascribed the unique morphology and structure of the detector.
The rough surface morphology of textured silicon enlarges the light-absorbing area of (BA)2PbCl4 by 20 times. Moreover, a p-n junction was constructed between (BA)2PbCl4 and textured silicon.
The electric field naturally present in the heterojunction facilitates the transport of carriers. Furthermore, the (BA)2PbCl4/textured silicon heterojunction exhibited significant selectivity towards UV light and demonstrated remarkable stability and repeatability in the air environment.
This work offers a new strategy for developing inexpensive and high-performance UV photodetectors, which may be significant for exploring the potential of layered perovskites in new photodetector device applications.