Tin (Sn)-based metal halide perovskites (MHPs) could be an environmentally benign alternative to lead-based ones, which are toxic. However, some critical issues need to be resolved before Sn-based MHPs can be leveraged in planar semiconductor devices. When arranged into a 2D structure (or quasi-2D structure with a few layers), defects in the crystal structure of Sn-based MHPs called 'grain boundaries' hamper the mobility of charge carriers throughout the material. If used in a TFT, this phenomenon results in a large series resistance that ultimately degrades performance. In addition, a TFT made using an Sn-based MHP arranged into a 3D structure faces a problem of extremely high carrier density of the 3D material, that causes the transistor to be permanently ON unless very high voltages are applied.
Scientists from Tokyo Tech, National Institute for Materials Science and Silvaco Japan have proposed a novel concept based on a hybrid structure for Sn-based metal halide perovskites (MHPs), called the '2D/3D core'shell structure.' In this structure, 3D MHP cores are fully isolated from one another and connected only through short 2D MHP strips (or 'shells'). This alternating arrangement manages to address both these issues, according to the team.