A team of researchers from Pohang University of Science and Technology, University of Electronic Science and Technology of China and Sungkyunkwan University has improved the performance of a p-type semiconductor transistor, using inorganic metal halide perovskite.
One of the biggest advantages of the new technology is that it enables solution-processed perovskite transistors to be simply printed as semiconductor-like circuits.
Researchers have tried to utilize perovskite in the p-type semiconductor for its excellent electrical conductivity, but its poor electrical performance and reproducibility have hindered commercialization thus far.
To overcome this issue, the researchers used the modified inorganic metal halide cesium tin triiodide (CsSnI3) to develop the p-type perovskite semiconductor and fabricated the high-performance transistor based on this. This transistor reportedly exhibits high hole mobility of 50cm2V-1s-1 and higher and the current ratio of more than 108, and recorded the highest performance among the perovskite semiconductor transistors that have been developed so far.
By making the material into a solution, the researchers succeeded in simply printing the p-type semiconductor transistor, similarly to printing a document. This method is not only convenient but also cost-effective, which can lead to the commercialization of perovskite devices in the future.
"The newly developed semiconductor material and transistor can be widely applicable as logic circuits in high-end displays and in wearable electronic devices, and also be used in stacked electronic circuits and optoelectronic devices by stacking them vertically with silicon semiconductors," explained Pohang University's Professor Yong-Young Noh on the significance of the study.