Researchers examine a perovskite-graphene device for X-ray detection
Researchers at Graphenea, University of Utah and Kairos Sensors have examined a perovskite-based graphene field effect transistor (P-GFET) device for X-ray detection.
The device architecture consisted of a commercially available GFET-S20 chip, produced by Graphenea, with a layer of methylammonium lead iodide (MAPbI3) perovskite spin coated onto the top of it. This device was exposed to the field of a molybdenum target X-ray tube with beam settings between 20 and 60 kVp (X-ray tube voltage) and 30–300 μA (X-ray tube current). Dose measurements were taken with an ion-chamber and thermo-luminescent dosimeters and used to determine the sensitivity of the device as a function of the X-ray tube voltage and current, as well as source-drain voltage.