Researchers from Southeast University in Bangaladesh and U.S-based Rochester Institute of Technology have examined the performance of a lead-free Cs2TiX6-based n–i–p type heterostructure perovskite solar cell design, performed using a one-dimensional device simulator, also known as the SCAPS-1D.
The design makes use of Cs2TiCl6 as an n-type front absorber, Cs2TiI6 as an I (intrinsic)-layer absorber and Cs2TiBr6 as a p-type absorber. NiO (p) and ZnO (n) are utilized as the hole transport material and electron transport material. The fluorine-doped tin oxide (FTO) acts as a front contact, conductive oxide, while Pt (platinum) is used as the back contact.
The results of the proposed cell architecture were evaluated by varying parameters such as absorber thickness, doping concentration, work function for the back contact, various resistance types, operating temperature, and defect densities.
After optimization, the fill factor (FF), device efficiency, open circuit voltage (Voc), and short circuit current density (Jsc) for the device stand at 80%, 27.36%, 1.3505 V, and 24.707735 mA/cm2, respectively. Gaining a higher efficiency value of the solar cell while being lead-free inorganic material-based could help give researchers insights into future research directions.